DMN3033LDM-7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 6.9A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 63 ns |
| Continuous Drain Current (ID) | 6.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.033Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
