Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.4W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.4W |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 30m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
Rise Time | 7ns |
Drain to Source Voltage (Vdss) | 30V |
Factory Lead Time | 1 Week |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Mount | Surface Mount |
Vgs (Max) | ±20V |
Mounting Type | Surface Mount |
Fall Time (Typ) | 7 ns |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Turn-Off Delay Time | 63 ns |
Weight | 7.994566mg |
Continuous Drain Current (ID) | 6A |
Transistor Element Material | SILICON |
Gate to Source Voltage (Vgs) | 20V |
Operating Temperature | -55°C~150°C TJ |
Drain Current-Max (Abs) (ID) | 6A |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Pulsed Drain Current-Max (IDM) | 24A |
JESD-609 Code | e3 |
Pbfree Code | yes |
Height | 1.1mm |
Part Status | Active |
Length | 3mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Width | 1.6mm |
Number of Terminations | 3 |
REACH SVHC | No SVHC |
ECCN Code | EAR99 |
RoHS Status | ROHS3 Compliant |
Resistance | 30mOhm |
Terminal Finish | Matte Tin (Sn) |
Lead Free | Lead Free |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |