Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 720mW Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 26.5m Ω @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 1.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 5.8A Ta |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±12V |
Continuous Drain Current (ID) | 5.8A |
Drain-source On Resistance-Max | 0.0265Ohm |
DS Breakdown Voltage-Min | 30V |
Feedback Cap-Max (Crss) | 80 pF |
RoHS Status | ROHS3 Compliant |