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DMN3065LW-7

MOSFET N-CH 30V 4A SOT-323


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3065LW-7
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 889
  • Description: MOSFET N-CH 30V 4A SOT-323 (Kg)

Details

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Parameters
Base Part Number DMN3065
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 770mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 1.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 465pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V
Rise Time 1.6ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 10.3 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.052Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
See Relate Datesheet

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