Parameters | |
---|---|
Base Part Number | DMN3065 |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 770mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 1.9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 52m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 465pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V |
Rise Time | 1.6ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 2 ns |
Turn-Off Delay Time | 10.3 ns |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 4A |
Drain-source On Resistance-Max | 0.052Ohm |
DS Breakdown Voltage-Min | 30V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Weight | 6.010099mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |