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DMN3110LCP3-7

MOSFET N-CH 30V 3.2A X2DFN1006-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3110LCP3-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 872
  • Description: MOSFET N-CH 30V 3.2A X2DFN1006-3 (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 3-XFDFN
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Power Dissipation-Max 1.38W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 69m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 1.52nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 8V
Vgs (Max) 12V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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