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DMN3150L-7

MOSFET N-CH 28V 3.2A SOT23-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3150L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 728
  • Description: MOSFET N-CH 28V 3.2A SOT23-3 (Kg)

Details

Tags

Parameters
Terminal Form GULL WING
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Turn On Delay Time 1.14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Factory Lead Time 1 Week
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 5V
Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Rise Time 3.49ns
Weight 7.994566mg
Transistor Element Material SILICON
Drain to Source Voltage (Vdss) 28V
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Packaging Tape & Reel (TR)
Published 2008
Vgs (Max) ±12V
JESD-609 Code e3
Pbfree Code yes
Fall Time (Typ) 3.49 ns
Part Status Active
Turn-Off Delay Time 15.02 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Continuous Drain Current (ID) 3.8A
Number of Terminations 3
ECCN Code EAR99
Gate to Source Voltage (Vgs) 12V
Resistance 85mOhm
Height 1mm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Length 2.9mm
Subcategory FET General Purpose Powers
Width 1.3mm
Radiation Hardening No
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
REACH SVHC No SVHC
See Relate Datesheet

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