DMN32D2LFB4-7
| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 1 Week |
| Contact Plating | Gold |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 100mA, 4V |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 39pF @ 3V |
| Number of Pins | 3 |
| Current - Continuous Drain (Id) @ 25°C | 300mA Ta |
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4V |
| Operating Temperature | -55°C~150°C TJ |
| Vgs (Max) | ±10V |
| Packaging | Tape & Reel (TR) |
| Turn-Off Delay Time | 51 ns |
| Published | 2017 |
| Continuous Drain Current (ID) | 300mA |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Gate to Source Voltage (Vgs) | 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Drain to Source Breakdown Voltage | 30V |
| Height | 350μm |
| ECCN Code | EAR99 |
| Length | 1mm |
| Resistance | 1.2Ohm |
| Additional Feature | HIGH RELIABILITY |
| Width | 600μm |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| RoHS Status | ROHS3 Compliant |
| Pin Count | 3 |
| Lead Free | Lead Free |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 350mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 350mW |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
See Relate Datesheet
