Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 28mOhm |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 720mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.4W |
Turn On Delay Time | 3.41 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 28m Ω @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 386pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 5.8A Ta |
Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
Rise Time | 6.18ns |
Drive Voltage (Max Rds On,Min Rds On) | 3V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6.18 ns |
Factory Lead Time | 1 Week |
Turn-Off Delay Time | 13.92 ns |
Contact Plating | Tin |
Continuous Drain Current (ID) | 4.2A |
Threshold Voltage | 1.5V |
Mount | Surface Mount |
Gate to Source Voltage (Vgs) | 20V |
Mounting Type | Surface Mount |
Drain Current-Max (Abs) (ID) | 5.8A |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Drain to Source Breakdown Voltage | 30V |
Number of Pins | 3 |
Weight | 7.994566mg |
Max Junction Temperature (Tj) | 150°C |
Transistor Element Material | SILICON |
Nominal Vgs | 1.5 V |
Operating Temperature | -55°C~150°C TJ |
Height | 1.1mm |
Packaging | Tape & Reel (TR) |
Length | 2.9mm |
Published | 2013 |
JESD-609 Code | e3 |
Width | 1.3mm |
REACH SVHC | No SVHC |
Pbfree Code | yes |
RoHS Status | ROHS3 Compliant |
Part Status | Active |
Lead Free | Lead Free |