Parameters | |
---|---|
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 750mA |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 0.75A |
Drain-source On Resistance-Max | 0.46Ohm |
Drain to Source Breakdown Voltage | 30V |
Max Junction Temperature (Tj) | 150°C |
Height | 1.1mm |
Length | 3mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Digi-Reel® |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 450mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 450mW |
Turn On Delay Time | 3.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 460m Ω @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 64.3pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 750mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 4.5V |
Rise Time | 2.8ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |