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DMN3730U-7

MOSFET N-CH 30V 750MA SOT23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3730U-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 269
  • Description: MOSFET N-CH 30V 750MA SOT23 (Kg)

Details

Tags

Parameters
Fall Time (Typ) 13 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.75A
Drain-source On Resistance-Max 0.46Ohm
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 450mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 450mW
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 64.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
See Relate Datesheet

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