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DMN4008LFG-7

MOSFET N-CH 40V 14.4A PWDI3333-8


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN4008LFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 307
  • Description: MOSFET N-CH 40V 14.4A PWDI3333-8 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3537pF @ 20V
Current - Continuous Drain (Id) @ 25°C 14.4A Ta
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Rise Time 14.1ns
Drive Voltage (Max Rds On,Min Rds On) 3.3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 24.4 ns
Turn-Off Delay Time 69.7 ns
Continuous Drain Current (ID) 14.4A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 40V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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