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DMN4468LSS-13

MOSFET N CH 30V 10A 8SOP


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN4468LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 262
  • Description: MOSFET N CH 30V 10A 8SOP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.52W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.46 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id 1.95V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 867pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 18.85nC @ 10V
Rise Time 14.53ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14.53 ns
Turn-Off Delay Time 18.84 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 30V
Height 1.5mm
Length 4.95mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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