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DMN55D0UT-7

MOSFET N-CH 50V 160MA SOT-523


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN55D0UT-7
  • Package: SOT-523
  • Datasheet: PDF
  • Stock: 271
  • Description: MOSFET N-CH 50V 160MA SOT-523 (Kg)

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 160mA Ta
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±12V
Continuous Drain Current (ID) 160mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage 50V
Height 750μm
Length 1.6mm
Width 800μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200mW Ta
Element Configuration Single
See Relate Datesheet

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