Parameters | |
---|---|
Pbfree Code | yes |
Width | 2.05mm |
REACH SVHC | No SVHC |
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free | Lead Free |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
JESD-30 Code | S-PDSO-N3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 660mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.03W |
Case Connection | DRAIN |
Turn On Delay Time | 6.6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 38m Ω @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1287pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 5.3A Ta |
Factory Lead Time | 1 Week |
Gate Charge (Qg) (Max) @ Vgs | 22.4nC @ 10V |
Rise Time | 8.1ns |
Mount | Surface Mount |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Mounting Type | Surface Mount |
Vgs (Max) | ±20V |
Package / Case | 6-UDFN Exposed Pad |
Fall Time (Typ) | 4 ns |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Turn-Off Delay Time | 20.1 ns |
Operating Temperature | -55°C~150°C TJ |
Continuous Drain Current (ID) | 5.3A |
Gate to Source Voltage (Vgs) | 20V |
Packaging | Tape & Reel (TR) |
Drain-source On Resistance-Max | 0.038Ohm |
Drain to Source Breakdown Voltage | 60V |
Height | 580μm |
Published | 2012 |
Length | 2.05mm |
JESD-609 Code | e4 |