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DMN6068SE-13

MOSFET N-CH 60V 4.1A SOT223


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN6068SE-13
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 628
  • Description: MOSFET N-CH 60V 4.1A SOT223 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 68mOhm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 3.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 68m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 10V
Rise Time 10.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.7 ns
Turn-Off Delay Time 11.9 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 20.8A
Avalanche Energy Rating (Eas) 37.5 mJ
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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