DMN6070SFCL-7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerUFDFN |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Base Part Number | DMN6070 |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 600mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 3.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 606pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V |
| Rise Time | 4.1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.085Ohm |
| Drain to Source Breakdown Voltage | 60V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
