DMN61D8LQ-13
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation-Max | 390mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.8 Ω @ 150mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 470mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 3V 5V |
| Vgs (Max) | ±12V |
| Continuous Drain Current (ID) | 470mA |
| Drain Current-Max (Abs) (ID) | 0.47A |
| Drain-source On Resistance-Max | 2.4Ohm |
| DS Breakdown Voltage-Min | 60V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
