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DMN62D0LFD-7

MOSFET N-CH 60V 0.31A 3-DFN


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN62D0LFD-7
  • Package: 3-UDFN
  • Datasheet: PDF
  • Stock: 512
  • Description: MOSFET N-CH 60V 0.31A 3-DFN (Kg)

Details

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Parameters
Length 1.25mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UDFN
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Power Dissipation-Max 480mW Ta
Element Configuration Single
Turn On Delay Time 2.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 31pF @ 25V
Current - Continuous Drain (Id) @ 25°C 310mA Ta
Gate Charge (Qg) (Max) @ Vgs 500nC @ 4.5V
Rise Time 2.1ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Vgs (Max) ±20V
Fall Time (Typ) 8.7 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 310mA
Gate to Source Voltage (Vgs) 20V
Height 480μm
See Relate Datesheet

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