Parameters | |
---|---|
Vgs(th) (Max) @ Id | 1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 4V |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 10A Ta |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V |
Drain to Source Voltage (Vdss) | 8V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | -6V |
Number of Terminations | 9 |
Continuous Drain Current (ID) | 10A |
Drain Current-Max (Abs) (ID) | 7.4A |
ECCN Code | EAR99 |
Drain-source On Resistance-Max | 0.014Ohm |
DS Breakdown Voltage-Min | 8V |
Feedback Cap-Max (Crss) | 350 pF |
RoHS Status | ROHS3 Compliant |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | BALL |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Mounting Type | Surface Mount |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Package / Case | 9-UFBGA, WLBGA |
Reference Standard | AEC-Q101 |
Transistor Element Material | SILICON |
JESD-30 Code | S-PBGA-B9 |
Operating Temperature | -55°C~150°C TJ |
Number of Elements | 1 |
Packaging | Tape & Reel (TR) |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Published | 2015 |
Power Dissipation-Max | 890mW Ta |
JESD-609 Code | e1 |
Pbfree Code | yes |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10m Ω @ 2A, 4.5V |