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DMP2007UFG-7

MOSFET P-CH 20V 18A PWRDI3333-8


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP2007UFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 699
  • Description: MOSFET P-CH 20V 18A PWRDI3333-8 (Kg)

Details

Tags

Parameters
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.3W Ta
Operating Mode ENHANCEMENT MODE
Factory Lead Time 1 Week
Case Connection DRAIN
Mount Surface Mount
FET Type P-Channel
Mounting Type Surface Mount
Transistor Application SWITCHING
Package / Case 8-PowerVDFN
Rds On (Max) @ Id, Vgs 5.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Number of Pins 8
Input Capacitance (Ciss) (Max) @ Vds 4621pF @ 10V
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25°C 18A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Operating Temperature -55°C~150°C TJ
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Continuous Drain Current (ID) 40A
Packaging Tape & Reel (TR)
Drain-source On Resistance-Max 0.007Ohm
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 50 mJ
RoHS Status ROHS3 Compliant
Published 2007
See Relate Datesheet

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