Parameters | |
---|---|
Additional Feature | HIGH RELIABILITY |
Lead Free | Lead Free |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
JESD-30 Code | R-PDSO-N4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 22.8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16m Ω @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 200μA |
Input Capacitance (Ciss) (Max) @ Vds | 4748pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 9.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 113nC @ 10V |
Rise Time | 29.8ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Factory Lead Time | 1 Week |
Vgs (Max) | ±12V |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Fall Time (Typ) | 100.6 ns |
Package / Case | 6-PowerUDFN |
Turn-Off Delay Time | 240.8 ns |
Number of Pins | 6 |
Continuous Drain Current (ID) | 9.2A |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Gate to Source Voltage (Vgs) | 12V |
Published | 2012 |
Drain to Source Breakdown Voltage | 20V |
JESD-609 Code | e4 |
Pulsed Drain Current-Max (IDM) | 90A |
Pbfree Code | yes |
Part Status | Active |
Height | 580μm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Length | 2.55mm |
Number of Terminations | 4 |
Width | 2.35mm |
ECCN Code | EAR99 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
RoHS Status | ROHS3 Compliant |