Parameters | |
---|---|
Capacitance | 1.496nF |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 13.7 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 38m Ω @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1496pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 14.4nC @ 4.5V |
Rise Time | 14ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 35.5 ns |
Turn-Off Delay Time | 79.1 ns |
Continuous Drain Current (ID) | 6.5A |
Gate to Source Voltage (Vgs) | 8V |
Pulsed Drain Current-Max (IDM) | 25A |
DS Breakdown Voltage-Min | 20V |
Avalanche Energy Rating (Eas) | 26 mJ |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 73.992255mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |