Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 2530pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 6.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 48.7nC @ 8V |
Rise Time | 23.5ns |
Drain to Source Voltage (Vdss) | 25V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 80.5 ns |
Turn-Off Delay Time | 137.6 ns |
Continuous Drain Current (ID) | 6.7A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 5.4A |
Drain to Source Breakdown Voltage | -25V |
Height | 580μm |
Length | 2.05mm |
Width | 2.05mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 27mOhm |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
JESD-30 Code | R-PDSO-N3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 800mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Case Connection | DRAIN |
Turn On Delay Time | 15.1 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 27m Ω @ 6.4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |