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DMP2039UFDE-7

MOSFET P-CH 25V 6.7A 6UDFN


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP2039UFDE-7
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 147
  • Description: MOSFET P-CH 25V 6.7A 6UDFN (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.7A Ta
Gate Charge (Qg) (Max) @ Vgs 48.7nC @ 8V
Rise Time 23.5ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 80.5 ns
Turn-Off Delay Time 137.6 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.4A
Drain to Source Breakdown Voltage -25V
Height 580μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 27mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 800mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 15.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
See Relate Datesheet

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