Parameters | |
---|---|
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | BALL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 920mW Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 7.3 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 70m Ω @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
Rise Time | 14ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 32 ns |
Turn-Off Delay Time | 42.6 ns |
Continuous Drain Current (ID) | 2.5A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 3.5A |
Drain-source On Resistance-Max | 0.15Ohm |
Drain to Source Breakdown Voltage | 20V |
Height | 620μm |
Length | 1mm |
Width | 1.5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-UFBGA, WLBGA |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |