Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.25W |
Turn On Delay Time | 12 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 80m Ω @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.25V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 443pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 3.4A Ta |
Factory Lead Time | 1 Week |
Gate Charge (Qg) (Max) @ Vgs | 7.3nC @ 4.5V |
Mount | Surface Mount |
Rise Time | 20ns |
Mounting Type | Surface Mount |
Drain to Source Voltage (Vdss) | 20V |
Package / Case | SOT-23-6 |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Number of Pins | 6 |
Vgs (Max) | ±12V |
Transistor Element Material | SILICON |
Fall Time (Typ) | 20 ns |
Operating Temperature | -55°C~150°C TJ |
Turn-Off Delay Time | 38 ns |
Packaging | Tape & Reel (TR) |
Continuous Drain Current (ID) | 3.4A |
Gate to Source Voltage (Vgs) | 12V |
Published | 2008 |
Drain-source On Resistance-Max | 0.08Ohm |
Pulsed Drain Current-Max (IDM) | 20A |
JESD-609 Code | e3 |
DS Breakdown Voltage-Min | 20V |
Height | 600μm |
Pbfree Code | yes |
Length | 1.6mm |
Width | 1.2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Part Status | Active |