Parameters | |
---|---|
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e4 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Capacitance | 49pF |
Technology | MOSFET (Metal Oxide) |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-N2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 360mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 10.3 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1 Ω @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 49pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 330mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V |
Rise Time | 37.3ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 163 ns |
Turn-Off Delay Time | 330 ns |
Continuous Drain Current (ID) | 330mA |
Gate to Source Voltage (Vgs) | 8V |
Drain-source On Resistance-Max | 1Ohm |
Drain to Source Breakdown Voltage | -20V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Number of Pins | 3 |
Transistor Element Material | SILICON |