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DMP21D6UFD-7

Enhancement Mode Transistor MOSFET P-Channel -20V -600mA 3-Pin X1-DFN1212 T/R


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP21D6UFD-7
  • Package: 3-UDFN
  • Datasheet: PDF
  • Stock: 541
  • Description: Enhancement Mode Transistor MOSFET P-Channel -20V -600mA 3-Pin X1-DFN1212 T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 3-UDFN
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 400mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46.1pF @ 10V
Current - Continuous Drain (Id) @ 25°C 600mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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