Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 400mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 5.8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.9 Ω @ 100mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 28.7pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 330mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
Rise Time | 5.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 16.4 ns |
Turn-Off Delay Time | 31.1 ns |
Continuous Drain Current (ID) | 330mA |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 0.25A |
Drain to Source Breakdown Voltage | 20V |
Height | 350μm |
Length | 650μm |
Width | 850μm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |