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DMP3028LK3-13

MOSFET P-CH 30V 27A TO252


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP3028LK3-13
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 536
  • Description: MOSFET P-CH 30V 27A TO252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.6W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1241pF @ 15V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 27A
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 24 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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