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DMP3037LSS-13

MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP3037LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 501
  • Description: MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Capacitance 931pF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 931pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Gate Charge (Qg) (Max) @ Vgs 19.3nC @ 10V
Rise Time 11.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 30.8 ns
Turn-Off Delay Time 55.8 ns
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.032Ohm
Drain to Source Breakdown Voltage -30V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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