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DMP3056L-7

MOSFET P-CH 30V 4.3A SOT23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP3056L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 447
  • Description: MOSFET P-CH 30V 4.3A SOT23 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.38W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.38W
Turn On Delay Time 4.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 642pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 11.8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Turn-Off Delay Time 35.2 ns
Continuous Drain Current (ID) -4.3A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 20A
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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