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DMP3056LDM-7

P Channel 30 V 65 mO 1.5 W 10.1 nC Surface Mount Power MosFet - SOT-26


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP3056LDM-7
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 755
  • Description: P Channel 30 V 65 mO 1.5 W 10.1 nC Surface Mount Power MosFet - SOT-26 (Kg)

Details

Tags

Parameters
Length 3mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 10.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 948pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 21.1nC @ 10V
Rise Time 5.3ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 50.1 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage -30V
Height 1.1mm
See Relate Datesheet

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