Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 17.6 ns |
Continuous Drain Current (ID) | 3.8A |
Threshold Voltage | -1.8V |
Gate to Source Voltage (Vgs) | 20V |
Turn Off Time-Max (toff) | 54.2ns |
Turn On Time-Max (ton) | 22ns |
Height | 1mm |
Length | 2.9mm |
Width | 1.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 70mOhm |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Voltage | 30V |
Power Dissipation-Max | 1.08W Ta |
Element Configuration | Single |
Current | 38A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.08W |
Turn On Delay Time | 6 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 70m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 336pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.8A Ta |
Rise Time | 5ns |