Parameters | |
---|---|
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 65mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1.25W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.25W |
Turn On Delay Time | 6 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 65m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 336pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 17.6 ns |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 4A |
Drain to Source Breakdown Voltage | 30V |
Height | 1.1mm |
Length | 3mm |
Width | 1.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |