Parameters | |
---|---|
Current - Continuous Drain (Id) @ 25°C | 5.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
Rise Time | 5ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9.5 ns |
Turn-Off Delay Time | 17.6 ns |
Continuous Drain Current (ID) | 5.3A |
Gate to Source Voltage (Vgs) | 20V |
Input Capacitance | 336pF |
Drain to Source Resistance | 65mOhm |
Rds On Max | 65 mΩ |
Height | 1.5mm |
Length | 4.95mm |
Width | 3.9mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Supplier Device Package | 8-SOP |
Weight | 850.995985mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta |
Turn On Delay Time | 6 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 65mOhm @ 5.3A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 336pF @ 25V |