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DMP31D0UFB4-7B

MOSFET P-CH 30V 540MA 3DFN


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP31D0UFB4-7B
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 102
  • Description: MOSFET P-CH 30V 540MA 3DFN (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 460mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.98 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 76pF @ 15V
Current - Continuous Drain (Id) @ 25°C 540mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Rise Time 5.85ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 16.6 ns
Turn-Off Delay Time 35.71 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage -30V
Height 350μm
Length 1.08mm
Width 675μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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