Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Weight | 95.991485mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | FAST SWITCHING |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W |
Case Connection | DRAIN |
Turn On Delay Time | 13.2 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 11m Ω @ 9.8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4234pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 8.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 47.5nC @ 5V |
Rise Time | 10ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 137.9 ns |
Turn-Off Delay Time | 302.7 ns |
Continuous Drain Current (ID) | 8.5A |
Gate to Source Voltage (Vgs) | 25V |
DS Breakdown Voltage-Min | 40V |
Height | 1.1mm |
Length | 5.1mm |
Width | 6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |