Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 25m Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1643pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 6.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 33.7nC @ 10V |
Rise Time | 14.7ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 30.9 ns |
Turn-Off Delay Time | 53.7 ns |
Continuous Drain Current (ID) | 8.6A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 6.7A |
Drain-source On Resistance-Max | 0.045Ohm |
Drain to Source Breakdown Voltage | -40V |
Height | 2.26mm |
Length | 6.7mm |
Width | 6.2mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.7W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 6.9 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |