Parameters | |
---|---|
Peak Reflow Temperature (Cel) | 260 |
Height | 2.52mm |
Length | 6.7mm |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Width | 6.2mm |
Radiation Hardening | No |
Number of Elements | 1 |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Number of Channels | 1 |
Power Dissipation-Max | 2.14W Ta |
Lead Free | Lead Free |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4.18W |
Case Connection | DRAIN |
Turn On Delay Time | 2.3 ns |
Factory Lead Time | 1 Week |
FET Type | P-Channel |
Contact Plating | Tin |
Mount | Surface Mount |
Transistor Application | SWITCHING |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Rds On (Max) @ Id, Vgs | 51m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Number of Pins | 3 |
Input Capacitance (Ciss) (Max) @ Vds | 674pF @ 20V |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Current - Continuous Drain (Id) @ 25°C | 7.2A Ta |
Operating Temperature | -55°C~150°C TJ |
Packaging | Digi-Reel® |
Published | 2012 |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 14.1ns |
JESD-609 Code | e3 |
Drain to Source Voltage (Vdss) | 40V |
Pbfree Code | no |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Part Status | Active |
Vgs (Max) | ±20V |
Fall Time (Typ) | 14.3 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Turn-Off Delay Time | 25.1 ns |
Number of Terminations | 2 |
Continuous Drain Current (ID) | -7.2A |
ECCN Code | EAR99 |
Threshold Voltage | -3V |
Resistance | 51mOhm |
JEDEC-95 Code | TO-252AA |
Subcategory | Other Transistors |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -40V |
Pulsed Drain Current-Max (IDM) | 28.9A |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Max Junction Temperature (Tj) | 150°C |