Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2004 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 720mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 720mW |
Turn On Delay Time | 3.6 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 80m Ω @ 4.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 587pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 2.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 12.2nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 36.3 ns |
Continuous Drain Current (ID) | -2.4A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.08Ohm |
Drain to Source Breakdown Voltage | -40V |
Max Junction Temperature (Tj) | 150°C |
Height | 1.1mm |
RoHS Status | ROHS3 Compliant |