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DMP58D0LFB-7

Trans MOSFET P-CH 50V 0.31A Automotive 3-Pin DFN T/R


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP58D0LFB-7
  • Package: 3-UFDFN
  • Datasheet: PDF
  • Stock: 447
  • Description: Trans MOSFET P-CH 50V 0.31A Automotive 3-Pin DFN T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 470mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.22W
Case Connection DRAIN
Turn On Delay Time 30.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 27pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Rise Time 84.1ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 5V
Vgs (Max) ±20V
Fall Time (Typ) 32.2 ns
Turn-Off Delay Time 201.8 ns
Continuous Drain Current (ID) 310mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 8Ohm
Drain to Source Breakdown Voltage -50V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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