DMP6023LE-13
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 28m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2569pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A Ta 18.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 53.1nC @ 10V |
| Rise Time | 7.1ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 62 ns |
| Turn-Off Delay Time | 110 ns |
| Continuous Drain Current (ID) | 18.2A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain-source On Resistance-Max | 0.028Ohm |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Avalanche Energy Rating (Eas) | 62.9 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.5mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Weight | 188.014037mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Additional Feature | HIGH RELIABILITY |
| Capacitance | 2.569nF |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
See Relate Datesheet
