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DMP6050SFG-13

DMP6050SFG Series 60 V 4.8 A P-Channel Enhancement Mode Mosfet - POWERDI333


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP6050SFG-13
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 652
  • Description: DMP6050SFG Series 60 V 4.8 A P-Channel Enhancement Mode Mosfet - POWERDI333 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1293pF @ 30V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4.8A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 32A
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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