Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 73.992255mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1.55W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.55W |
Turn On Delay Time | 5.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 13m Ω @ 10.4A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2296pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 10.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 45.7nC @ 10V |
Rise Time | 24.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 6.6 ns |
Turn-Off Delay Time | 33.1 ns |
Continuous Drain Current (ID) | 10.4A |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 63A |
FET Feature | Schottky Diode (Body) |
Radiation Hardening | No |
REACH SVHC | No SVHC |