banner_page

DMS3016SSSA-13

MOSFET N-CH 30V 9.8A SO-8


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMS3016SSSA-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 556
  • Description: MOSFET N-CH 30V 9.8A SO-8 (Kg)

Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 4.69 ns
Turn-Off Delay Time 36.41 ns
Continuous Drain Current (ID) 9.8A
Gate to Source Voltage (Vgs) 12V
Pulsed Drain Current-Max (IDM) 90A
DS Breakdown Voltage-Min 30V
FET Feature Schottky Diode (Body)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.54W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.54W
Turn On Delay Time 6.62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1849pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 8.73ns
Drain to Source Voltage (Vdss) 30V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good