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DMT10H010LSS-13

MOSFET N-CH 100V SO-8


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMT10H010LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 847
  • Description: MOSFET N-CH 100V SO-8 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.4W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11.5A Ta 29.5A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 29.5A
Drain Current-Max (Abs) (ID) 11.5A
Drain-source On Resistance-Max 0.0095Ohm
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 61.5 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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