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DMT10H015LSS-13

MOSFET N-CH 100V 8.3A


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMT10H015LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 291
  • Description: MOSFET N-CH 100V 8.3A (Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 1.2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V
Drain to Source Voltage (Vdss) 100V
Factory Lead Time 1 Week
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mount Surface Mount
Vgs (Max) ±20V
Mounting Type Surface Mount
Continuous Drain Current (ID) 8.3A
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
See Relate Datesheet

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