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DMT3006LFG-7

MOSFET N-CHA 30V 16A POWERDI


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMT3006LFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 485
  • Description: MOSFET N-CHA 30V 16A POWERDI (Kg)

Details

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Parameters
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 27.8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 55.6A Tc
Gate Charge (Qg) (Max) @ Vgs 22.6nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 55.6A
Drain Current-Max (Abs) (ID) 16A
Drain-source On Resistance-Max 0.01Ohm
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 31 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
See Relate Datesheet

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