DMT5015LFDF-7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 15mOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 820mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 2.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 902.7pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Rise Time | 5.1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 2.7 ns |
| Turn-Off Delay Time | 10.6 ns |
| Continuous Drain Current (ID) | 9.1A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 50V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
