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DMTH4005SPSQ-13

MOSFET N-CH POWERDI5060-8


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMTH4005SPSQ-13
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 823
  • Description: MOSFET N-CH POWERDI5060-8 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.6W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3062pF @ 20V
Current - Continuous Drain (Id) @ 25°C 20.9A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 49.1nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Drain Current-Max (Abs) (ID) 20.9A
Drain-source On Resistance-Max 0.0037Ohm
Pulsed Drain Current-Max (IDM) 150A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 132.3 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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