Parameters | |
---|---|
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.7W Ta 150W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 6.5m Ω @ 20A, 10V |
Mounting Type | Surface Mount |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Package / Case | 8-PowerTDFN |
Input Capacitance (Ciss) (Max) @ Vds | 1895pF @ 30V |
Number of Pins | 8 |
Current - Continuous Drain (Id) @ 25°C | 15.5A Ta 100A Tc |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Gate Charge (Qg) (Max) @ Vgs | 29.1nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Packaging | Tape & Reel (TR) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Published | 2015 |
Vgs (Max) | ±20V |
Series | Automotive, AEC-Q101 |
Continuous Drain Current (ID) | 100A |
Drain Current-Max (Abs) (ID) | 15.5A |
Pulsed Drain Current-Max (IDM) | 160A |
JESD-609 Code | e3 |
DS Breakdown Voltage-Min | 40V |
Avalanche Energy Rating (Eas) | 20 mJ |
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |